Abstract
An X-ray epitaxial film interferometer is described that makes it possible to measure the deflections of the atomic planes of a film, which are parallel to the interface, with a sensitivity of several tenth of an angstrom. The size of the region under study in the interface plane ranges from several tens of microns to centimeters. As a result, a change in the angle of inclination of the reflecting atomic planes of 0.002″–2″ is recorded. A single-crystal Si substrate and a Si film grown using the molecular-beam epitaxy technique serve as the diffracting crystals of the X-ray interferometer. Porous silicon functions as a separating nondiffracting layer. The effect of earlier uncontrollable technological factors on the crystal lattice structure of a semiconductor heterostructure was detected.
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