Abstract
An X-ray epitaxial film interferometer is described that makes it possible to measure the deflections of the atomic planes of a film, which are parallel to the interface, with a sensitivity of several tenth of an angstrom. The size of the region under study in the interface plane ranges from several tens of microns to centimeters. As a result, a change in the angle of inclination of the reflecting atomic planes of 0.002″–2″ is recorded. A single-crystal Si substrate and a Si film grown using the molecular-beam epitaxy technique serve as the diffracting crystals of the X-ray interferometer. Porous silicon functions as a separating nondiffracting layer. The effect of earlier uncontrollable technological factors on the crystal lattice structure of a semiconductor heterostructure was detected.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
