Abstract
SiO 2 thin films containing nanocrystalline Si (nc-Si) and Er ions have been fabricated by using a metal vapor vacuum arc (MEVVA) ion source. Photoluminescence (PL) properties of the films were studied as the function of the Er ion dose. The PL intensity was found to be strongly enhanced by incorporating nc-Si in the films. The intensity of the 1.54 μm luminescence peaks firstly increases with the increasing of the Er concentration, arriving at a maximum with Er concentration of 8.0 at.% at room temperature (RT). Then PL yields decreased with further increase in Er ion dose. A mechanism about energy transferring between the photogenerated carrier in the nc-Si and Er 3+ in SiO 2 has been investigated.
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