Abstract
SiO 2 thin films containing nanocrystalline Si (nc-Si) and Er ions have been fabricated by using a metal vapor vacuum arc (MEVVA) ion source. Photoluminescence (PL) properties of the films were studied as the function of the Er ion dose. The PL intensity was found to be strongly enhanced by incorporating nc-Si in the films. The intensity of the 1.54 μm luminescence peaks firstly increases with the increasing of the Er concentration, arriving at a maximum with Er concentration of 8.0 at.% at room temperature (RT). Then PL yields decreased with further increase in Er ion dose. A mechanism about energy transferring between the photogenerated carrier in the nc-Si and Er 3+ in SiO 2 has been investigated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.