Abstract
Copper (II) oxide was obtained at 400 °C by the coprecipitation method. The morphology corresponds to a porous network of interconnected submicron particles. The bandgap energy (Eg) of this material was ~1.44 eV. The photocurrent experiments show a decreased from 54 μA to 27 μA, when the radiation was changed from UV-A (365 nm) to near-infrared (850 nm), indicating the key role of the photon energy. When different values of optical irradiance were used, from 60 to 100 mW/cm2, the results revealed a reliable quantitative detection of light. From I - V curves, an ohmic behavior was observed, regardless of the wavelength used. The best values of photoresponsivity, quantum efficiency and specific detectivity were obtained in UV light. Field experiments revealed a high sensitivity to variations in the intensity of sunlight, which suggests its application in photocells. This study shows that CuO can be used in broad-spectrum optoelectronic sensors.
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