Abstract
Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) are being designed into high-power applications due to their excellent switching performance and good paralleling capability. However, not a lot of work has been done on its protection circuit for high-power applications. In this paper, an ultrafast discrete protection circuit with the use of multi-functional dual-gate pads of GaN HEMTs is proposed. Implementation results show that the GaNPX® dual-gate pads of GaN HEMTs not only can be used for paralleling, but also for the purpose of a protection circuit. The proposed circuit can be used in GaN-based applications for both short-circuit protection (SCP) and over-current protection (OCP) with a stable latch-up and no mis-triggering. The detailed design considerations are also given in the paper. In addition, experiments also verify that this extra protection circuit does not impact the natural switching performance of GaN HEMTs.
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