An Ultra-Wideband Low-Loss Millimeter-Wave Slow-Wave Wilkinson Power Divider on 0.18 <formula formulatype="inline"><tex Notation="TeX">$\mu{\rm m}$</tex></formula> SiGe BiCMOS Process

Abstract

An ultra-wideband low-loss millimeter-wave Wilkinson power divider has been developed on a 0.18 μm SiGe BiCMOS process. The miniaturization and low loss of the power divider are achieved by utilizing capacitive loading and a slow-wave CPW structure configured with floating metal strips periodically placed orthogonal to the CPW. The developed power divider has extremely wideband performance from DC to 67 GHz with less than 1 dB insertion loss from DC to 61 GHz, amplitude and phase imbalances less than 0.5 dB and 2° from DC to 67 GHz, respectively, and isolation greater than 15 dB across 37-67 GHz. At 60 GHz, the designed power divider has only 0.9 dB of insertion loss and better than 25 dB of isolation. The core chip size is 150 μm×525 μm.