Abstract
AbstractA DC‐30GHz ultra‐wideband distributed amplifier based on the 0.15‐um GaAs process is proposed and characterized. The distributed amplifier has nine power amplifying units with a cascode structure. The measured results show that the amplifier has 16‐dB gain in the frequency range of DC‐30GHz. The output power of 1‐dB compression point is 19 dBm at 10 GHz, and the saturated output power is 25 dBm. The chip size is 3× 1.2 mm.
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