Abstract
An n-Laterally Double Diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOST) with self-driven split p-top gate is studied. By integrating a low-voltage charge pump circuit, a constant positive voltage (≈10 V) is self-generated in the OFF-state and applied to the split p-top electrode in the ON-state. This voltage assists the accumulation of electrons near the surface of the n-drift region. As a result, the specific ONresistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,sp</sub> is reduced without an increase in effective gate charge Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> . Moreover, the adaptation of the optimum variation lateral doping enables a shorter n-drift region length to support the same breakdown voltage. The simulation results indicate that for a 600 V device, the R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,sp</sub> is 20.7 mQ · cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . This is approximately five times smaller than a conventional double REduced SURface Field LDMOST.
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