An ultra-low-firing NaBi3V2O10 ceramic and its dielectric properties at RF and microwave frequency bands

Abstract

An ultra-low-firing NaBi3V2O10 ceramic, fabricated at 620 °C by a solid-state route, was studied in terms of microstructure, dielectric properties, and chemical compatibility with aluminum electrodes for the first time. NaBi3V2O10 crystalized in a primitive triclinic structure P1 and developed a dense microstructure, and exhibited good chemical compatibility with aluminum. These merits render its potential utilization in low-temperature cofired ceramic technology. However, the microwave dielectric properties of NaBi3V2O10 are unsatisfactory with er ~ 26.0, Q × f ~ 3200 GHz, and τf ~ − 88.3 ppm/°C. Based on RF dielectric characterizations of relative permittivity and impedance over a broad frequency and temperature range, the relatively low-quality factor was explained by the oxygen vacancies caused by sintering and Na and Bi volatilization. These results imply an optimization potential in dielectric properties of NaBi3V2O10 through compositional and processing adjustments. This work also provides an alternative paradigm to evaluate the performances of microwave dielectric properties.