Abstract
Static random access memories (SRAMs) are prone to a single-event upset (SEU), also known as soft errors, due to transient noise caused by a single strike of radiation. Beam testing has been extensively used to measure the SEU cross section of SRAMs as a function of the linear energy transfer (LET) of charged particle radiation. The evolution of the cross section as a function of LET is called the cross section curve, which plays a vital role in upset rate analysis for hardness assurance. Various analytical models have been developed to describe SRAM SEU cross-section curves, and they have proven to be useful in reducing the cost of beam testing as well as revealing the physics behind test results. However, they involve arbitrary parameters, which make it challenging to predict cross-section curves without any beam results. Moreover, the current method of analyzing cross-section curves or the LET dependence of cross sections relies on a model different from that is used in the analysis of power-supply-voltage dependence, which is becoming increasingly important because of the demand for low-power operation. To overcome these problems, this paper proposes a unified equation that describes both LET and the power-supply-voltage dependence of SRAM SEU cross sections. It comprises only parameters that are physically clear and familiar to SEU researchers. As well as giving possible constraints, comparisons with data from the literature suggest it can be applied to SRAMs fabricated in bulk and silicon-on-insulator (SOI) processes across generations from the early 1000-nm-scale to the current 10-nm-scale technology nodes.
Highlights
T HE EVOLUTION of the single-event upset (SEU) crosssection (σ) of a static random access memory (SRAM) as a function of the linear energy transfer (LET or L) of charged particle radiation, known as the cross-section curve, is usually analyzed with the following model based on the Weibull function [1]: σ = σ∞ [ 1 − exp { − ( L − LT W )S }] (1)
Based on our recent findings, we have developed a new model for SRAM SEU cross-section curves
The model is an empirical model and only available as long as SEU is governed by charge collection from inside the region of sensitive transistors but simple and in accordance with the previously reported models
Summary
T HE EVOLUTION of the single-event upset (SEU) crosssection (σ) of a static random access memory (SRAM) as a function of the linear energy transfer (LET or L) of charged particle radiation, known as the cross-section curve, is usually analyzed with the following model based on the Weibull function [1]: σ. 1) There is no established way to predict all of the Weibull parameters. 2) There is no established way to predict the dependence of σ on the power supply voltage (VDD) from the Weibull model. Researchers need to repeat beam testing under various VDD conditions and analyze test results with models different from the Weibull model [3], [4]. These models are mostly based on the model originally derived by Hazucha and Svensson [5]. Shindou are with the Research and Development Directorate, JAXA, Tsukuba 305-8505, Japan. O. Kawasaki was with the Research and Development Directorate, JAXA, Tsukuba 305-8505, Japan. Ohshima are with the National Institutes for Quantum Science and Technology, Takasaki 370-1292, Japan
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