Abstract
This work presents the first thermal-diffusivity-based temperature sensor in SOI technology; it has an untrimmed inaccuracy of ±0.6°C (3π) from -70°C up to 170°C and uses up to 7x less power than prior art. The sensor uses an electrothermal filter (ETF) to measure the thermal diffusivity of silicon, D, which has a well-defined 1/T <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1.8</sup> temperature dependence. The ETF's output is digitized by a phase-domain sigma-delta modulator. Measured data from several process lots show that that the sensor's inaccuracy is limited by lithographic spread, and not by wafer-to-wafer or batch-to-batch variations.
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