Abstract
Implementing memory using nonvolatile, low power, and nano-structure memristors has elicited widespread interest. In this paper, the SPICE model of Sr0.95Ba0.05TiO3 (SBT)-memristor was established and the corresponding characteristic was analyzed. Based on an SBT-memristor, the process of writing, reading, and rewriting of the binary and multi-value memory circuit was analyzed. Moreover, we verified the SBT-memristor-based 4 × 4 crossbar binary and multi-value memory circuits through comprehensive simulations, and analyzed the sneak-path current and memory density. Finally, we apply the 8 × 8 crossbar multi-value memory circuits to the images memory.
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