Abstract
This paper presents a newly developed RF mixed-signal BiCMOS technology which consists of a high self resonant frequency (f/sub SR/) spiral inductor, and complementary bipolar transistors implemented in a 0.2-/spl mu/m dual gate CMOS process. The main features of this technology are as follows; (1) a spiral inductor built on the premetal deep trenches decreases capacitive coupling and thus increases f/sub SR/, (40 GHz) by 75% compared to a conventional structure; (2) premetal deep trenches realize 19-dB reduction in substrate noise as well as latch-up immunity; (3) a dual recessed collector sink reduces transistor size and lowers collector resistance for a complementary bipolar transistors. We developed a premetal deep trench and recessed collector sink structures which are very promising to realize an RF mixed-signal system-on-a-chip.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
