Abstract
A novel overvoltage driver is proposed to speed up the turn-on transition of series-connected MOSFETs module which serves as the main switch in high voltage pulse generator. In order to realize the overvoltage driver, a nanosecond pulse with the amplitude of hundreds of volts is superposed on a square driving signal by linear transformer driver scheme. The results show that, comparing to the commercial high current driver, the turn-on time of a 10kV MOSFETs module including ten devices with the proposed driving scheme can be shortened from ∼25ns to ∼7ns. The proposed overvoltage driver can be used to conveniently modulate the rise time and pulse width of high voltage nanosecond pulse generator constructed by MOSFETs. In addition, it is demonstrated that there is almost no influence of the overvoltage driver on the gate-source characteristics of device by analyzing the variation of C-f curves of input capacitances.
Highlights
POWER MOSFETs have great potential as switches for high speed high voltage applications such as pulsed power technology.1,2 constrained by voltage-blocking capability of single device, it is necessary to connect many devices in series for high voltage applications at present.3,4 Generally, each device requires an independent driver circuit, and these drivers must be isolated from each other
To address the above problem, we develop a novel overvoltage driver scheme with inductive adder pulse for fast switching of series-connected MOSFETs module
When U2 increases to ∼500V, it can be switched on within ∼7ns. It demonstrates that the improvement of fast switching behavior of series-connected MOSFETs module greatly depends on the turn-on transition of the bottom device, which further verifies the above analysis
Summary
POWER MOSFETs have great potential as switches for high speed high voltage applications such as pulsed power technology. constrained by voltage-blocking capability of single device, it is necessary to connect many devices in series for high voltage applications at present. Generally, each device requires an independent driver circuit, and these drivers must be isolated from each other. With the increase of the number of MOSFETs in series, the driving synchronization of many devices is a challenging task especially for fast pulse applications, and the system will become so complicated that it is difficult to be constructed compactly. For those problems, some solutions with devices seriesconnected has been reported in the previous researches.. A commercial driver was normally utilized in the previous researches It still needs a further investigation on the fast switching characteristics of series-connected high voltage MOSFETs module by improving the performance of gate driver.
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