Abstract
It has been shown experimentally that during the interband absorption of a high-power picosecond light pulse in GaAs, which is accompanied by abnormally fast recombination, there sets in an overthreshold state under which the spectral position of the border between enhancement and absorption only insignificantly exceeds the width of the band gap E g while optical properties and the energy distribution of charge carriers have peculiarities in the h ̵ ω ∼ E g range.
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