Abstract
A cause of the attractive Hubbard interaction is proposed which is based on a mechanism mediated by carrier plasmons, viz. , density fluctuations of externally injected carriers (electrons or holes). This attractive interaction is dependent on the concentrations of low-density carriers and is dominant against the original repulsive Hubbard interaction in some favorable cases such as in low-density carriers occupying a band edge in two-dimensional (2-D) and/or three-dimensional (3-D) systems. The interaction derived is able to play a decisive role in understanding the mechanism of high- T c superconductivity.
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