Abstract
A light-emitting device structure is proposed which includes an organic thin-film structure merged with an organic light-emitting diode structure by utilizing a part of the electron accumulation layer in the organic thin-film transistor as a common electrode for each structure. The organic thin-film structure and the organic light-emitting diode structure each include an organic semiconductor material in which hole mobility is greater in bulk region of the material than electron mobility in the bulk region but less in the channel region. The advantages of such a light-emitting device include less complex processing and a simpler pixel circuit structure in comparison to separately fabricating OTFT and OLED structures and subsequently interconnecting them to form a pixel. Furthermore, relative to a light-emitting transistor, the proposed structure offers the advantage of a broader light emission area which is more suitable for use in display devices.
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