Abstract
An efficient optoelectronic cold cathode has been made which includes a Si-compensated AlxGa1−xAs electroluminescent diode covered with an absorbing p-type GaAs layer having a negative electron affinity surface. This structure is designed to minimize current crowding in the vicinity of the Ohmic contact. An over-all efficiency of 1.1×10−3 (current emitted into vacuum/diode current) has been achieved. This represents a factor of 102–103 improvement over previous p-n junction or optically coupled cold cathode structures.
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