Abstract

In this paper, an optimized structure of 4H-SiC U-shaped trench gate MOSFET (UMOSFET) with low resistance is proposed. The optimized structure adds an n-type region, wrapping the p+ shielding region incorporated at the bottom of the trench gate. The depletion region formed by the p+ shielding region reduces greatly for the high dopant concentration of the added region. This added region also conducts electrons downward and expands the electrons to the bottom of the p+ shielding region. We discussed the influence of dopant concentration and the width of the added region on the breakdown voltage (BV) and the ON-resistance in this paper. A reasonable size and an optimized concentration were chosen for the added region in our simulation. The channel inversion layer mobility was set to 50 cm $^{2}$ /Vs, and the specific ON-resistance and the BV were 1.64 $\text{m}\Omega \cdot {\rm cm}^{2}$ ( $V_{\mathrm {GS}}= 15$ V, $V_{\mathrm {DS}}= 1$ V, and no substrate resistance was included) and 891 V, respectively, using the numerical simulation.

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