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Abstract
A new solar cell structure was presented in this paper, which consists of two p-n junctions of copper indium gallium diselenide (CIGS) and copper gallium diselenide (CGS) and double anti-reflector layers of cadmium sulfide and zinc telluride. The structure of the solar cell was designed and optimized. The current matching was achieved with tuning the thickness of the anti-reflector layers. The optimization procedure was performed by adjusting the CIGS bandgap, doping concentration, and thickness of semiconductor layers. The appropriate characteristics of open-circuit voltage equal to 2.03 V and short-circuit current density (Jsc) equal to 25.568 mAcm2 were obtained with optimum efficiency of 45.23 percent.
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