Abstract
AbstractWe studied the influence of doping with 4d and 5d elements on the optical and photo‐induced properties of Bi12SiO20 (BSO) crystals. Doping with Ru, Rh and Re does not significantly influence BSO absorption spectra as well as photo‐induced absorption and photocurrent in BSO. On the other hand, doping with Os with concentration of 0.0004 mass% increases by more than an order of magnitude the illumination response time, the strength of the photochromic effect and photocurrent, all this being accompanied by only a slight change of the absorption coefficient as compared to undoped BSO. The observed effects are explained in the framework of the Rose model assuming that doping with Os creates deep levels in the gap that act as recombination centers with a very little cross‐section of electron capture. We also studied the kinetic curves of photocurrent increase and decrease in BSO:Os which enabled us to determine the magnitude of the cross‐section of a photon capture at an impurity center. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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