Abstract
In this paper, an on-chip micro-mechanical test structure has been developed to investigate the frictional behavior of Deep-RIE sidewall contacting surfaces of single crystal silicon which is most widely used in micromechanical systems (MEMS). The test structure is fabricated on Silicon on Insulator (SOI) wafer using standard MEMS process. Two orthogonally placed electrostatic comb-drive actuators are adopted, one comb drive is used to align a contact with the friction surfaces under a certain normal load and another one is used to generate the tangential motion on contacted sidewall surfaces. To assess the frictional behavior, both static and dynamic friction coefficients were observed on the contacted surfaces during the experiment with different DRIE process parameters. Through experiments, it was found that with the increment of normal forces, the static friction coefficient is no longer a constant value and it has less effect on dynamic friction coefficient. DRIE process parameters greatly influence the frictional properties on both static and dynamic friction coefficients.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.