Abstract
Testing and debugging of electrostatic discharge (ESD) or electrical fast transient (EFT) issues in modern electronic systems can be challenging. The following paper describes the design of an on-chip circuit which detects and stores the occurrence of a fast transient stress event at the ESD protection structures in an I/O pad. Measurements and simulations of a test circuit in 90 nm technology show it can accurately detect and record the presence of a transient stress event with a peak current as low as 0.9 A or duration as short as 1 ns and that the detector works well across typical temperature and process variations. The small size of the detector will allow it to be used effectively even in low-cost commercial ICs.
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