An On-Chip Electromagnetic Bandgap Structure with ESD Protection for Noise Suppression in 16-nm FinFET CMOS

Abstract

By using periodical electromagnetic bandgap (EBG) structure, a wideband band-stop filter (BSF) with ESD protection is first realized in 16-nm FinFET CMOS technology for GHz-order noise suppression. The proposed EBG unit cell consists of an on-chip inductor in series with MOS capacitors and gated ESD diodes. The gated ESD diodes are not only used as ESD protection devices, but also co-designed with MOS capacitors and an inductor to form LC resonator for the BSF. The measurement results demonstrate TLP currents of 1.75 A and 1.35 A for the PDS and NDS modes, respectively, corresponding to a HBM ESD level over 2 kV. With the consideration of metal density rule for power/ground mesh, the on-chip EBG array presents a stopband of 15.5 GHz, from 4.5 to 20 GHz, with an isolation level of 30 dB.