An omni-directional comparison between common-emitter and common-base SiGe HBTs

Zhenqiang Ma,Ningyue Jiang,Guogong Wang,Hui Li,Guoxuan Qin

doi:10.1109/icsict.2006.306128

An omni-directional comparison between common-emitter and common-base SiGe HBTs

Zhenqiang Ma, Ningyue Jiang + Show 3 more

https://doi.org/10.1109/icsict.2006.306128

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Publication Date: Jan 1, 2006

Citations: 3

Affiliation: University of Wisconsin–Madison

#Common-base SiGe #Common-emitter + Show 8 more

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Abstract

The unique device structures of SiGe HBTs, in comparison to Si bipolar homojunction transistors (BJTs), allow us to reconsider the value of common-base (CB) configuration for high-frequency amplifications. In this paper, an omni-directional comparison between common-emitter (CE) and common-base SiGe power HBTs is made. By comparing the power gain, power handling, linearity, noise and stability characteristics between these two configurations, significant advantages for circuit design can be obtained by using the proper configuration of SiGe HBTs for certain amplifier applications

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