Abstract
AbstractThis letter presents the design of a 13.56 MHz offset‐enhanced full‐wave active rectifier, tailored for wirelessly powered biomedical implants. The design incorporates digitally assisted, delay‐compensated active diodes and symmetrical bulk biasing in the rectifier core to enhance conduction time, thus improving the voltage conversion ratio (VCR) and power conversion efficiency (PCE). A delay improvement is achieved both in no‐load and high‐load conditions through an additional comparison path with an offset voltage that is higher than zero. The proposed rectifier is implemented and fabricated in a 180 nm CMOS technology with an area of 0.024 . The rectifier, tested and measured with inductive links, offers a maximum VCR of 96.4% and a maximum PCE of 89%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
