Abstract
Charge trapping, especially electron trapping phenomena in GaN/AlGaN/Gd2O3/Ni–Au metal-oxide-semiconductor structure have been investigated. Owing to crystallization of Gd2O3 film after annealing at 900 °C in ambient air for 30 s, a significant memory window of 1.6 V is observed under 5 V@100 ms programming pulse compared with that of as-deposited sample. The fabricated structure exhibits no erase phenomena under large negative bias of −20 V. Only time dependent natural charge loss is occurred. Even so, 0.9 V of memory window is still remained after 21 h of retention. Good endurance of 103 cycles with 2.0 V memory window is also obtained.
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