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Abstract
Abstract An objective lens system has been developed for electron beam cell projection lithography for quarter micron LSI. This system features are a 5 μm square maximum shot size, small deflection aberrations in a 5 mm field and high speed three stage deflectors. The experimental aberration coefficients agree well with simulated ones. As a result, cell patterns and 0.15 μm line and space patterns are delineated within a 5 mm field. This lens is applicable to memory and logic LSI fabrication.
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