Abstract
With SiGe device technology still developing, a concomitant effort to develop accurate dopant quantification over the entire Si1−xGex (0≤x≤1) range using ultra low energy secondary ion mass spectrometry is required. Here we present a comprehensive secondary ion mass spectrometry study of the B11+ yield behaviour from a range of Si1−xGex (0≤x≤1) reference samples implanted with the same B dose. Depth profiling conditions include near normal incidence O2+ over an energy range of 0.2−1.0 keV. Quantification of the B concentration for each profile was achieved by determining the individual profile sensitivity factor. Only for EP≤300 eVwas the variation in sensitivity factor with Ge well described by a linear dependence over the whole Si1−xGex (0≤x≤1) matrix.
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