Abstract
The anodic oxidation of silicon and tantalum in organic solvents containing small quantities of dissolved salts and water has been studied. The source of oxygen in the oxide layer has been determined using O18‐labeled materials. The isotopic exchange of oxygen between the various components of the electrolyte under thermal and electrolytically induced conditions was measured using mass spectrometric analysis and found to be extremely slow. Nuclear methods of analysis of isotopic oxygen were used to determine the source of oxygen in the oxide layer on both metals. It was found that over 80% of the oxygen of the oxide comes from water, the rest from the salt. The small extent of incorporation of nitrogen‐containing anions in the oxide layers was also measured by a nuclear method.
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