Abstract
The Pd/n-SnO <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> /i-diamond/p-diamond diodes prepared by field-enhanced hot-wire CVD (HWCVD) (FEHWCVD) system on a silicon substrate with nanotip structures are studied systematically. Both the nanotip structure and the better film quality deposited by the FEHWCVD lead the developed p-i-n diamond diode to have a high relative sensitivity ratio of ~ 91% to 100-ppm-carbon monoxide (CO)-gas ambient. The sensitivity ratio is better than 79% compared to the one without the nanotip and prepared by the conventional HWCVD. Thus, the developed p-i-n diamond diode has better potential for high-temperature CO sensing applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
