Abstract
QWIP based on the GaAs/AlGaAs material system are commonly used to achieve LWIR FPA. This detector is constrained by the integration charge capacity of conventional integral-readout-reset mode CMOS readout integrated circuits. As a result, the technical specification for the temperature resolution of the infrared detectors, known as NETD, typically ranges from 20 mK to 30 mK. In this paper, we present a 320 × 256 LWIR QWIP FPA, which is formed by bonding quantum well detectors and a pixel-level DROIC. Notably, the NETD achieved by this detector is superior to 5 mK, with the DR exceeding 100 dB, and it operates effectively within a temperature range of 40 K to 80 K, demonstrating excellent adaptability to varying environmental temperatures.
Published Version
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