Abstract
As isotropic model for the silicon band structure which accurately approximates both density of states and group velocity of the real anisotropic band structure and yields excellent agreement with both the collision and nonhomogeneous terms of the Boltzmann transport equation has been developed. The model, represented through a simple set of energy-wave vector tables, has been implemented in a Monte Carlo device simulator, but can also be extended to alternative methods for solving the Boltzmann equation. Simulations of homogeneous silicon bars show a very good agreement with available experimental data. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
