Abstract
High-efficiency pGa 1− x Al x As, nGaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped GaAlAs melt. This one-step growth procedure produces a graded band gap pGa 1− x Al x As layer 0.2–0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
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