An IR-spectroscopy study of the radiation-chemical transformation of n-hexane on the silicon surface

Abstract

The radiation-chemical decomposition of n-hexane in the Si-n-hexane system under the action of γ radiation at room temperature has been studied by reflection-absorption IR spectroscopy. It has been shown that the adsorption of n-hexane on the silicon surface occurs by the molecular and dissociative mechanisms. It has been found that the radiolysis of n-hexane at absorbed dose Dγ of 5–50 kGy is accompanied by the formation of surface intermediate active decomposition products: silicon alkyls, π complexes of olefins, and silicon hydrides. The kinetics of accumulation of the final decomposition product—molecular hydrogen-has been analyzed to determine its radiation-chemical yield of Gads(H2) = 36.4 molecules/100 eV. A possible mechanism of this process has been discussed.