Abstract

Nanosecond pulsed-power generators have many applications in industries. As the rise time and fall time of conventional semiconductor switches are usually more than a few nanoseconds, it is necessary to employ special switches or new pulse generating methods to achieve nanosecond pulses. A common method for producing narrow pulse voltage waveforms is using the reverse recovery process of diodes. In this method, a super fast recovery diode is used as an opening switch in an inductor current path. A drift step recovery diode can form a rapid cut-off current front; Hence this method can be an effective solution to generate narrow pulses. This paper describes an investigation about the effect of various parameters on the quality of output voltage waveform in this method. Based on the results of this study, a high voltage nanosecond pulse circuit is designed with conventional diodes. Simulation and experimental results are presented to show the validity of the presented design.

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