An Investigation on the Effect of the Catalyst on Physical Properties of Silicon Oxide Nanostructures Prepared by CVD Technique

Abstract

Here, nano and microstructures of silicon oxide layers grown on p-Si (111) wafer have synthesized by evaporating SnCl2.2H2O powder in a mixture of Ar and O2 gas flow using chemical vapor deposition (CVD) technique. The growth temperature and the vacuum pressure were 950 °C and 10-3 torr, respectively. Through this study, samples have characterized by SEM, XRD, EDS and PL methods. The grown sample while has a combination of porous and layered morphology, it has a polycrystalline nature including a mixture of SiO2-x (002) and SnO2 phases. The EDS elemental analysis confirmed the presence of Si, O and Sn atoms in the composition, which is consistent with the XRD data. The PL spectrum show a strong peak in violet region (424 nm) attributed to the crystal defects at the SiO2-x and SnO2 interfaces.