Abstract
Polycrystalline PdS thin films with tetragonal structure have been grown by direct sulphuration of Pd layers. They are formed by crystallites of size ∼ 50 nm. As-grown PdS films show a Seebeck coefficient, S = − 250 ± 30 μV/K, which indicates an n-type conductivity. Electrical resistivity of the samples, measured by the four contact probe, is (6.0 ± 0.6) × 10 − 2 Ω·cm. Hall effect measurements, confirms n-type conductivity with a negative carrier density n = (8.0 ± 2.0) × 10 18 cm − 3 and electron mobility μ of (20 ± 2) cm 2/V s. Band gap energy ( E g) and absorption coefficient ( α) are determined from the optical transmission and reflectance of the films. A direct transition with energy gap E g = (1.60 ± 0.01) eV is obtained. Optical absorption coefficient in the range of photon energies hν > 2.0 eV is higher than 10 5 cm − 1 . All these properties make PdS thin films a good alternative material for solar applications.
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