Abstract
AbstractA theoretical investigation into the impact of the thermal boundary resistance on the performance of uncooled edge‐emitting 1.3μm InGaAsN/GaAs quantum well lasers has been performed. A state‐of‐the‐art 2D laser diode simulation tool has been extended to accurately model the thermal resistance due to the acoustic material mismatch and defect scattering at epitaxial interfaces. A small, but noticeable, increase in quantum well temperature is observed. The results clearly highlight the need for the inclusion of thermal boundary resistance in device simulation tools. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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