Abstract

Polyoxometalate (POM) hybrid materials have shown potential as spin-coatable, patternable dielectric thin-films and components for lithographic resists. In particular, the octamolybdate cluster has been shown to possess good spin-coating properties and the patterning capabilities of hybrid octamolybdate thin-films were explored using a combination of broadband UV and electron beam lithography (EBL) techiniques. Dielectric properties of these films were determined by ellipsometry, and octamolybdate clusters were subsequently investigated as negative resists in various blends for potential uses in next-generation photolithography, where contrast, sensitivity, and line edge roughness characteristics were determined. Preliminary evidence for the suppression of the diffusion of photo-generated acids is presented.

Highlights

  • Applications utilizing polyoxometalate hybrid material chemistry have continued to make interesting strides over recent years

  • The work outlined within this article focuses primarily on polyoxometalates (POMs) as photo-active thin-films

  • The initial goal of this project was to assess the capabilities of POMs as photoresist components for next-generation photolithography

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Summary

Introduction

Applications utilizing polyoxometalate hybrid material chemistry have continued to make interesting strides over recent years. The work outlined within this article focuses primarily on polyoxometalates (POMs) as photo-active thin-films. The initial goal of this project was to assess the capabilities of POMs as photoresist components for next-generation photolithography. Spin-coatable hybrid materials, especially their inorganic component traits, have consistently been sought after for properties such as etch resistance and reduced pattern swelling [5,6]. While several POMs were explored over the duration of this project [8,9], the octamolybdate (Mo8 ) POM cluster, [α-Mo8 O26 ]4− [10] was directly spin-coatable and patternable under UV exposure, properties that best furthered the primary thin-film patterning objective. Mo8 films were found to act as negative-tone resists both alone and in resist blends

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