Abstract
Transparent gate structures were fabricated by electron-beam evaporation of Sn-doped In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> on oxidized p-Si substrates. The samples were oxidized at 1100°C in dry oxygen. No post-oxidation or post-electrode-deposition annealing was carried out. Admittance-voltage-frequency measurements were made under optical illumination. Interface state density distributions and hole and electron capture cross sections were obtained using the recently developed optical metal-oxide-semiconductor admittance technique. The experimental interface state density profile contained two peaked distributions, one near the valence band edge E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</inf> , and the other near the conduction band edge E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> , Overlying a concave background. The peak near E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> was sharper and the peak density was higher than in the Case of the peak near E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</inf> . The capture cross section versus bandgap energy profile also displayed a peaked distribution for interface states under each of the peaks. With increasing illumination, the state density at the peak increased, the peak energy location moved closer to the respective band edge, and the capture cross section decreased. The experimental results show the presence of defects at unpassivated Si-SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> interfaces, which exchange electrons/holes with the silicon bands under illumination.
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