Abstract
This paper presents a frequency dependent reliability study of commercially available GaN HEMTs. Both circuit and device-level experiments were performed to better understand the device-level cause of degradation. It was determined through step-frequency analysis performed in a boost converter that there is a frequency-dependent device degradation for positive gate stress. The point of degradation and its primary effect on the converter before the circuit ultimately failed have been analyzed with converter efficiency, gate current, and gate voltage overshoot. The findings of this experiment clearly show a decline in efficiency and voltage overshoot and increment in gate current, which are linked to device degradation. Furthermore, the recovery behavior of degraded devices has been investigated. However, after initial degradation, devices did not show any signs of recovery over twenty-four-hour recovery periods. The causal origin of these phenomena associated with the gate structure of the device was established by gate step-stress testing as well as an examination and analysis of the possible conduction mechanisms through the gate structure.
Highlights
Wide bandgap (WBG) semiconductor devices, such as those based on gallium nitride (GaN) and silicon carbide (SiC), facilitate the development of high-power, switch-mode power electronics that can realize higher temperatures, voltages, and frequencies as compared to those utilizing traditional silicon (Si) devices
Technological development has been devoted toward the aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs), which leads to increased breakdown voltage, reduced ON-resistance, suppressed current collapse, and reduced gate leakage current [5]
From the terminal behavior, these HEMT devices exhibit similar current-voltage (I-V) characteristics to traditional MOSFETs, the unique construction and physics involved in GaN HEMTs give rise to properties that are not seen in MOSFETs [6]
Summary
Wide bandgap (WBG) semiconductor devices, such as those based on gallium nitride (GaN) and silicon carbide (SiC), facilitate the development of high-power, switch-mode power electronics that can realize higher temperatures, voltages, and frequencies as compared to those utilizing traditional silicon (Si) devices. HEMTs combine the voltage blocking properties inherent in GaN’s wide bandgap with high conductivity due to GaN’s ability to spontaneously form a two-dimensional electron gas (2DEG) when interfaced with aluminum gallium nitride (AlGaN). These properties allow the use of GaN HEMTs in power. From the terminal behavior, these HEMT devices exhibit similar current-voltage (I-V) characteristics to traditional MOSFETs, the unique construction and physics involved in GaN HEMTs give rise to properties that are not seen in MOSFETs [6]
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