Abstract
CdO thin films were prepared by electrodeposition method. Solution temperatures were varied from 58 to 98 °C. It was understood from the film thicknesses and current densities that the reaction rate increased as the temperature increased. Good crystallization and a thick film were obtained at 98 °C. It was found that the energy band gap varied between 1.99 and 2.61 eV depending on the bath temperature. SEM images also showed that surface morphologies were dependent on bath temperature.
Highlights
Science and technology have given rise to a tremendous escalation in this century
Thin films of CdO samples were obtained by employing electrodeposition
The current densities showed that when deposition temperature increased, reaction rate and film thicknesses increased
Summary
Science and technology have given rise to a tremendous escalation in this century. In the fields of science and technology, nanotechnology is much substantial. Nanosized research has opened revolutionary opportunities for a wide number of technological applications in the past decade (Kalpanadevi et al 2013). Regarding the nano size materials, transparent metal oxide films are of technological importance for liquid crystal displays, chemical sensors for solar cells, and nanoporous films for dye sensitized solar cells (Jayakrishnan and Hodes 2003). CdO is an important n-type semiconductor metal oxide, which belongs to the II–VI group (Giribabu et al 2013). CdO has a large direct band gap of
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