An investigation of angle effect on heavy ion induced single event effect in SiC MOSFET

Abstract

The angle impact on the single event effect in SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been evaluated by Ta ion irradiation experiments. Two bias voltages of 275 V and 350 V were chosen to analyse the oxide and the body damages of the 900 V-rated devices, respectively. Two different angles of along and vertical to the stripes were tested for SiC MOSFETs with stripe-cell structures. The results show that the leakage degradation of the devices reduced with the angle increasing. The leakage paths changed from the drain-source dominating at normal incidence to the drain-gate at 30° for 350 V irradiations. The weakening of the combined effect between the charge deposition and electric filed in angular irradiation is the main reason of body damage attenuation. The results would help comprehend the single event effect characteristics and mechanisms of SiC MOSFET.