Abstract
An alternative method of doping and surface functionalization of diamond using a chemical route was explored. The interaction of Li with the surface and bulk of oxygen-terminated diamond was investigated using Angle-Resolved X-ray Photoemission Spectroscopy (ARXPS). A stable LiO2 termination of diamond (100) surface and doping of near-surface diamond bulk was achieved up to an annealing temperature of 850 °C. The changes in interaction between the species involved (C, O, Li) and their stoichiometric ratios at the surface were investigated as a function of annealing temperature. This was done using ARXPS peak analysis.Graphic abstract
Highlights
Our age has seen a huge demand on energy sources to provide for our day-to-day uses which we tend to fulfill by nonrenewable sources
No signs of significant graphitization or loss of sp3 character were observed in High-Pressure High-Temperature (HPHT) diamond; there is a small peak around 1540 cm−1, which corresponds to the defect clusters in Boron-doped polycrystalline diamond (BDD) diamond and could not be removed with acid washing
The deconvolution of the O 1s peaks reveals the presence of a mix of ether and carbonyl bonds, while another peak for metal oxide can be seen at a lower binding energy of 530.77 eV which can be attributed to LiO2 [35]
Summary
Our age has seen a huge demand on energy sources to provide for our day-to-day uses which we tend to fulfill by nonrenewable sources. A way of decreasing so much burden on nonrenewable sources of energy is to produce materials with low work function. Using these materials, energy can be produced through thermionic emission where thermal energy makes the material emit electrons and provides us with devices that produce electric power. Zamir et al [19] have demonstrated the possibility of doping diamond with higher concentrations of dopants Li and N using lithium nitride suspension and gaseous ammonia, respectively Their method resulted in a higher concentration of both species than those reported by previous diffusion and ion implantation studies, with no lattice damage
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