Abstract

In the past, terahertz spectroscopy has mainly been performed based on terahertz time-domain spectroscopy systems in a transmission or a window/prism-supported reflection configuration. These conventional approaches have limitations in regard to characterizing opaque solids, conductive thin films, multiple-layer structures, and anisotropic materials. Ellipsometry is a self-reference characterization technique with a wide adaptability that can be applied for nearly all sample types. However, terahertz ellipsometry has not yet been widely applied, mainly due to the critical requirement it places on the optical setting and the large discrepancy with regard to traditional terahertz spectroscopy and conventional optical ellipsometry. In this Tutorial, we introduce terahertz time-domain spectroscopic ellipsometry from the basic concept, theory, optical configuration, error calibration to characterization methods. Experimental results on silicon wafers of different resistivities are presented as examples. This Tutorial provides key technical guidance and skills for accurate terahertz time-domain spectroscopic ellipsometry.

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