Abstract
The low-temperature photoluminescence (PL) of xPbO·(1−x)SiO2 glasses (x=0.20–0.75) was studied at Т=10K. The recorded PL-spectra are a superposition of three spectral components with maxima located at 1.8eV (identified as Pb 6p→metal-bridging O2p radiative electron transition, the “R”-band), 2.0eV (Pb 6p→non-bridging O2p, the “O”-band) and 2.55eV (Pb 6p→Pb 6s, the “B”-band), respectively. It was found the essential link for “R”, “O” and “B” PL-bands with chemical composition x of the glasses under study. These concentration dependences are expressed as mutual PL-intensity variations for each recorded luminescence band that allowed to determine their origin. The shape of established dependences well coincides with numerical data on NBO- and MBO-density of chemical bonding, reported previously.The overall PL-manner within the temperature range of 10–295K is described by an empirical Street’s law. It was shown that experimental photoluminescence quenching curves may be precisely approximated as a superposition of Mott relationships for nonequivalent luminescence centers. The obtained distribution of PL-centers on the activation energy for luminescence quenching reflects the essential donation of the low-energy states into the overall PL-process. The width of this energy distribution affects by the type of PL-emission band and the disordering degree in the arrangement of local PL-centers of a certain kind.
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