An intermediate (1.0–1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy

Abstract

Intermediate (1–1.5 monolayer) stage of InAs deposition on the GaAs(100) singular and vicinal (3° towards [011] direction) surfaces results in the formation of different InAs surface arrangements. The formation of few monolayer-height quantum wires along [001] direction occurs immediately after 1 monolayer InAs deposition on the singular surface. The characteristic period equals ∼ 30 nm. Increase in mean thickness of InAs to 1.5 monolayer results in a less pronounced surface corrugation (“parquet” like structures) and the characteristic period increases to 50–60 nm. The wire-like structures on vicinal surfaces occurs independently of the mean thickness of InAs (within the region 1–1.5 monolayers).