An interfacial C-S bond bridged S-scheme ZnS/C3N5 for photocatalytic H2 evolution: Opposite internal-electric-field of ZnS/C3N4, increased field strength, and accelerated surface reaction

Abstract

An interfacial C-S bond bridged ZnS/C3N5 heterojunction was constructed for photocatalytic H2 evolution. Different from traditional type-II ZnS/C3N4 heterojunction, the electron transfer followed S-scheme pathway, due to opposite internal-electric-field (IEF) directions in these two heterojunctions. The C-S bond formation was carefully investigated, and they were susceptive to the preparation temperatures. In photocatalytic reaction, C-S bond was functioned as the “high-speed channel” for electron separation and transfer, and the IEF strength in ZnS/C3N5 was 1.86 × 108 V/m, 2.6 times higher than that in ZnS/C3N4. Moreover, the C-S bond also altered the surface molecular structure of ZnS/C3N5, and hence the surface reaction was accelerated via improving H2O adsorption and activation behaviors. Benefiting from the S-scheme pathway, enhanced IEF strength, and accelerated surface reaction, the photocatalytic H2 production over ZnS/C3N5 reached up to 20.18 mmol/g/h, 3.2 and 2.5 times higher than those of ZnS/C3N4 and ZnS/C3N5-300 without C-S bond.