Abstract
Abstract The interfaces formed on the two (0001) polar faces of single crystal n-type 6H-SiC by Re evaporation and subsequent annealing were investigated by X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and work function (WF) measurements. Rhenium was deposited from submonolayer up to 2 nm thickness and gradually annealed up to 1100 K. Deposition led to a weakening and eventual disappearance of the 1 × 1 LEED pattern of the clean surface, an increase of the WF up to the value of metallic Re and the formation of a Schottky barrier with a height of 0.7±0.2 eV for both faces. The Re 4 f 7 2 peak binding energy decreased during deposition from approx. 41.1 eV below monolayer coverage, to 40.5 eV for a 2 nm film indicating an island growth of the film. Annealing of the Re films up to 1100 K on both faces led to Re particle coalescence without affecting the low Schottky barrier at the interface, however, there are indications of chemical changes at the interface which could affect the electrical characteristics of the contact.
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