Abstract
Due to their unique properties, electromagnetic bandgap (EBG) materials are of high interest for applications in communication technology for many frequency bands from microwave up to optical frequencies. We have investigated in both simulation and experiment a two dimensionally periodic EBG structure made by reactive ion etching of silicon with a bandgap for transverse magnetic waves in the millimeter wave range around 100 GHz. The structure comprises both a large bandgap and a high mechanical stability due to interconnecting dielectric bridges.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
