Abstract
Due to their unique properties, electromagnetic bandgap (EBG) materials are of high interest for applications in communication technology for many frequency bands from microwave up to optical frequencies. We have investigated in both simulation and experiment a two dimensionally periodic EBG structure made by reactive ion etching of silicon with a bandgap for transverse magnetic waves in the millimeter wave range around 100 GHz. The structure comprises both a large bandgap and a high mechanical stability due to interconnecting dielectric bridges.
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